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Same model may have multiple batches, images only for reference.
IRF7751TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7751TRPBF

Part No IRF7751TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 4.5A 8TSSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 35 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1464pF @ 25V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 001926-IRF7751TRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7751TRPBF CAD Model

Description

The Infineon Technologies IRF7751TRPBF is a dual P-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 4.5A @ 25°C.

  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On at Id,Vgs: 35 mOhm @ 4.5A, 10V
  • Maximum Gate Charge: 44nC @ 10V
  • Package: 8-TSSOP

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