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IRF7805ATR Real Image
Same model may have multiple batches, images only for reference.

IRF7805ATR

Part No IRF7805ATR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8-SOIC / Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Datasheet
IRF7805ATR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 31nC @ 5V
Vgs (Maximum) ±12V
Power Dissipation (Maximum) 2.5W (Ta)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 7A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 777030-IRF7805ATR
Popularity Medium
Supply and Demand Status Limited
Family Name IRF7805A
Introduction Date October 10, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF7805ATR CAD Model

Description

The Infineon Technologies HEXFET MOSFET, IRF7805ATR, is a N-Channel transistor with a drain-source voltage rating of 30V and maximum drain current of 13A @ 25°C.

  • Gate-source threshold voltage: 3V @ 250μA
  • Gate charge: 31nC @ 5V
  • Power dissipation: 2.5W
  • Operating temperature range: -55°C to 150°C
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type: SMD
  • Status: Obsolete
  • Alternatives: AP4036AGM-HF, DMN4800LSSQ-13, RXH100N03TB, RSS090N03FRATB

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115+ $2.8252 $324.8980
154+ $2.5329 $390.0666
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