The Infineon Technologies MOSFET is a N-Channel polarity power transistor with a maximum power dissipation of 2.5W (Ta).

• Polarity: N-Channel
• Power Dissipation (Max): 2.5W (Ta)
• Mounting Type: SMD (SMT)
• Package Case: 8-SO
• Package Dimensions: 8-SOIC (0.154", 3.90mm Width)
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 13.6A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 1V @ 250μA
• Maximum Gate Charge: 14nC @ 4.5V
• Maximum Input Capacitance: 1010pF @ 15V
• Maximum Rds On @ Id,Vgs: 9.1 mOhm @ 13A, 10V
• Operating Temperature Range: -55°C to 155°C (TJ)
• Product Category: Discrete Semiconductor Product
• Status: Obsolete (EOL)
• Quantity per Package: 4k pcs