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IRF7828PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7828PBF

Part No IRF7828PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.6A 8-SOIC
Datasheet
IRF7828PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 1010pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 10A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046738-IRF7828PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7828PBF CAD Model

Description

The Infineon Technologies IRF7828PBF is a MOSFET transistor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13.6A (Ta)
  • Maximum Rds On @ Id,Vgs: 12.5 mOhm @ 10A, 4.5V
  • Channel Type: N-channel MOSFET
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 14nC @ 5V
  • Drive Voltage: 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Application: Discrete Semiconductor Products
  • Power Dissipation: 2.5W (Ta)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Package Quantity: 95

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