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IRF7832Z International Rectifier
Same model may have multiple batches, images only for reference.

IRF7832Z

Part No IRF7832Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A 8SO
Datasheet
IRF7832Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3860 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 95 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604686-IRF7832Z
Ultra Librarian 3D Model Ultra Librarian IRF7832Z CAD Model

Description

The IRF7832Z is a single N-channel power MOSFET designed for high-performance applications.

  • Manufacturer: Infineon Technologies
  • Product: IRF7832Z
  • Type: Single N-channel power MOSFET
  • Drain-to-Source Voltage: 30V
  • Continuous Drain Current: 21A @ 25°C
  • Rds On (Max): 3.8mOhm @ 20A, 10V
  • Vgs(th): 2.35V @ 250μA
  • Series: HEXFET
  • Mounting: Surface mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3761 $56.4150
365+ $0.3087 $112.6755
565+ $0.2990 $168.9350
775+ $0.2894 $224.2850
1,005+ $0.2797 $281.0985
1,340+ $0.2508 $336.0720
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Availability: 9,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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