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IRF7809ATR Real Image
Same model may have multiple batches, images only for reference.

IRF7809ATR

Part No IRF7809ATR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14.5A 8-SOIC
Datasheet
IRF7809ATR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 75nC @ 5V
Max Input Capacitance 7300pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069389-IRF7809ATR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7809ATR CAD Model

Description

The Infineon Technologies 069389-IRF7809ATR is an N-Channel MOSFET designed for use in electronic components.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Package: 8-SO
  • Mounting: Surface Mount Technology
  • Drive Voltage: 4.5V
  • Continuous Drain Current: 14.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Suitable for: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6684 $66.8400
240+ $0.5485 $131.6400
370+ $0.5314 $196.6180
505+ $0.5143 $259.7215
655+ $0.4972 $325.6660
875+ $0.4456 $389.9000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,773 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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