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Same model may have multiple batches, images only for reference.
IRF7901D1TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7901D1TRPBF

Part No IRF7901D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.2A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.2A
Maximum Rds On at Id,Vgs 38 mOhm @ 5A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10.5nC @ 5V
Max Input Capacitance 780pF @ 16V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 001967-IRF7901D1TRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7901D1TRPBF CAD Model

Description

The Infineon Technologies IRF7901D1TRPBF is a dual N-Channel FET that is designed for use in a wide range of applications.

  • Supply and Demand: Limited
  • Gate FET: Logic level
  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.2A
  • Features: Reliable and efficient component

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,200 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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