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IRF7904PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7904PBF

Part No IRF7904PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7.6A/11A 8SOIC
Datasheet
IRF7904PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.6A, 11A
Maximum Rds On at Id,Vgs 16.2 mOhm @ 7.6A, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 910pF @ 15V
Maximum Power Dissipation 1.4W, 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 069400-IRF7904PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7904PBF CAD Model

Description

The Infineon Technologies IRF7904PBF is a dual N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7.6A and 11A @ 25°C
  • Gate-Source Threshold Voltage: 2.25V @ 25μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 910pF @ 15V
  • Maximum Rds On @ Id,Vgs: 16.2 mOhm @ 7.6A, 10V
  • Package: 8-SO
  • Maximum Power Dissipation: 1.4W and 2W
  • Status: Obsolete (EOL)
  • Recommendation: Not recommended for new designs

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84+ $2.0160 $169.3440
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156+ $1.8000 $280.8000
195+ $1.7280 $336.9600
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