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Same model may have multiple batches, images only for reference.
IRF8915PBF Real Image
Same model may have multiple batches, images only for reference.

IRF8915PBF

Part No IRF8915PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.9A
Rds On (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF89
Standard Package 355 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 160155-IRF8915PBF
Ultra Librarian 3D Model Ultra Librarian IRF8915PBF CAD Model

Description

The IRF8915PBF is a HEXFET™ MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for various electronic applications.

  • Drain to Source Voltage (Vdss): 20V
  • Configuration: Dual N-Channel
  • On-Resistance (Rds On): 18.3mOhm @ 8.9A and a gate-source voltage (Vgs) of 10V
  • Maximum Power: 2W
  • Mounting: Surface mount
  • Manufacturer: Infineon Technologies
  • Status: Obsolete

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