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Same model may have multiple batches, images only for reference.
IRF9204PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9204PBF

Part No IRF9204PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 74A TO-220AB
Datasheet
IRF9204PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 100μA
Max Gate Charge 224nC @ 10V
Max Input Capacitance 7676pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046767-IRF9204PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRF9204PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance P-channel MOSFET.

  • Power Dissipation: Up to 143W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Package: TO-220AB
  • Mounting Type: Through-hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 16 mOhm @ 37A, 10V
  • Gate-Source Threshold Voltage: 3V @ 100μA
  • Maximum Input Capacitance: 7676pF @ 25V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Package Quantity: 50

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