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IRF9540NPBF

Part No IRF9540NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 23A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 97nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 117 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017560-IRF9540NPBF
Family Name IRF9540
Introduction Date January 23, 2004
ECCN EAR99
Country of Origin China
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF9540NPBF CAD Model

Description

The Infineon Technologies IRF9540NPBF is a P-channel MOSFET transistor that is ideal for use in various electronic applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 23A @ 25°C
  • Maximum Rds on @ Id,Vgs: 117 mOhm @ 11A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Power Dissipation: 140W (Tc)
  • Package: TO-220AB
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2123 $50.9520
505+ $0.1989 $100.4445
785+ $0.1921 $150.7985
1,120+ $0.1787 $200.1440
1,455+ $0.1720 $250.2600
1,815+ $0.1653 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 115,190 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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