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IRF9956TRPBF

Part No IRF9956TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 3.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 100 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 190pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 113420-IRF9956TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9956TRPBF CAD Model

Description

The Infineon Technologies 113420-IRF9956TRPBF is a dual N-channel logic level gate FET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 3.5A @ 25°C
  • Maximum Power Dissipation: 2W
  • Packaging: reel - TR
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Mounting: SMD (SMT)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id,Vgs: 100 mOhm @ 2.2A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3564 $51.6780
300+ $0.3339 $100.1700
465+ $0.3226 $150.0090
670+ $0.3000 $201.0000
870+ $0.2888 $251.2560
1,085+ $0.2775 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,440 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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