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Same model may have multiple batches, images only for reference.
IRF9Z24NSTRRPBF
Same model may have multiple batches, images only for reference.

IRF9Z24NSTRRPBF

Part No IRF9Z24NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, P-CHANNEL, -55V, -12A, 175 mOhm, 12.7 nC Qg, D2-Pak
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package D2PAK
Continuous Drain Current (ID) -12 A
Drain to Source Voltage (Vdss) -55 V
Fall Time 37 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Power Dissipation 3.8 W
Radiation Hardening No
Rise Time 55 ns
RoHS Compliant
Turn-Off Delay Time 23 ns
Turn-On Delay Time 13 ns
Win Source Part Number 995700-IRF9Z24NSTRRPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF9Z24NSTRRPBF CAD Model

Description

Infineon Technologies IRF9Z24NSTRRPBF is a surface mount MOSFET with a drain-source voltage of -55V and a continuous drain current of -12A.

  • Drain-Source Voltage: -55V
  • Continuous Drain Current: -12A
  • Package: D2PAK
  • Turn-On Delay Time: 13ns
  • Turn-Off Delay Time: 23ns
  • Maximum Operating Temperature: 175°C
  • Minimum Operating Temperature: -55°C
  • RoHS Compliant: Yes
  • Supply and Demand Status: Short

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40+ $1.3928 $55.7120
90+ $1.1429 $102.8610
140+ $1.1071 $154.9940
190+ $1.0714 $203.5660
245+ $1.0357 $253.7465
325+ $0.9286 $301.7950
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