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IRF9Z34NSTRLPBF

Part No IRF9Z34NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 19A D2PAK / Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 015802-IRF9Z34NSTRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRF9Z34NS
Introduction Date August 25, 1997
ECCN EAR99
Country of Origin Republic of Korea, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF9Z34NSTRLPBF CAD Model

Description

The Infineon Technologies IRF9Z34NSTRLPBF is a P-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 19A at 25°C.

  • Package: D2PAK
  • Popularity: high
  • Supply and Demand Status: limited
  • Win Source Part Number: 015802-IRF9Z34NSTRLPBF

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5896 $50.1160
185+ $0.5523 $102.1755
285+ $0.5336 $152.0760
405+ $0.4963 $201.0015
525+ $0.4777 $250.7925
655+ $0.4590 $300.6450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,440 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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