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Same model may have multiple batches, images only for reference.
IRFB3256PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3256PBF

Part No IRFB3256PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 75A TO-220AB
Datasheet
IRFB3256PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 6600pF @ 48V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046810-IRFB3256PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB3256PBF CAD Model

Description

The IRFB3256PBF is an N-channel MOSFET manufactured by Infineon Technologies.

  • Application: Discrete Semiconductor Product
  • Package: TO-220AB
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Drive Voltage: 10V
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 3.4 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Max Gate Charge: 195nC @ 10V
  • Max Input Capacitance: 6600pF @ 48V

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