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IRFB3256PBF

Part No IRFB3256PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 75A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 195nC @ 10V
Max Input Capacitance 6600pF @ 48V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046810-IRFB3256PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB3256PBF CAD Model

Description

The IRFB3256PBF is an N-channel MOSFET manufactured by Infineon Technologies.

  • Application: Discrete Semiconductor Product
  • Package: TO-220AB
  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 75A (Tc)
  • Drive Voltage: 10V
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 3.4 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Max Gate Charge: 195nC @ 10V
  • Max Input Capacitance: 6600pF @ 48V

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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