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IRFB3307ZGPBF

Part No IRFB3307ZGPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069449-IRFB3307ZGPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFB3307ZGPBF CAD Model

Description

The Infineon Technologies 069449-IRFB3307ZGPBF is an N-channel MOSFET that operates at a temperature range of -55°C to 175°C (TJ).

  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Maximum Power Dissipation: 230W (Tc)
  • Packaging: Tube/rail
  • Mounting: Through hole
  • Case/Package: TO-220AB
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Rds On @ Id,Vgs: 5.8 mOhm @ 75A, 10V
  • Applications: Power supplies, motor control, and DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,778 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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