The Infineon Technologies IRFB4127PBF is a N-channel MOSFET with a drain-source breakdown voltage of 200V and a maximum continuous drain current of 76A (Tc).

• Drain-Source Breakdown Voltage: 200V
• Maximum Continuous Drain Current: 76A (Tc)
• Power Dissipation: 375W (Tc)
• Maximum Rds On: 20 mOhm @ 44A, 10V
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Gate Charge: 150nC @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Input Capacitance: 5380pF @ 50V
• Application: Discrete semiconductor products
• Popularity: High