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IRFB4127PBF

Part No IRFB4127PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 76A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 5380pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 089103-IRFB4127PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB4127PBF CAD Model

Description

The Infineon Technologies IRFB4127PBF is a N-channel MOSFET with a drain-source breakdown voltage of 200V and a maximum continuous drain current of 76A (Tc).

  • Drain-Source Breakdown Voltage: 200V
  • Maximum Continuous Drain Current: 76A (Tc)
  • Power Dissipation: 375W (Tc)
  • Maximum Rds On: 20 mOhm @ 44A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 5380pF @ 50V
  • Application: Discrete semiconductor products
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9198 $50.5890
120+ $0.8615 $103.3800
185+ $0.8324 $153.9940
260+ $0.7742 $201.2920
340+ $0.7451 $253.3340
420+ $0.7160 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,870 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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