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IRFB4321PBF

Part No IRFB4321PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 83A TO-220AB
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4460pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 089358-IRFB4321PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFB4321
Introduction Date June 23, 2006
ECCN EAR99
Country of Origin China, Germany, Malaysia, Philippines, Republic of Korea, Taiwan
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB4321PBF CAD Model

Description

Infineon Technologies' IRFB4321PBF is an N-channel MOSFET designed for high-power applications.

  • Maximum Power Dissipation: 350W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current at 25°C: 85A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Packaging: Tube/Rail
  • Quantity: 95 pcs
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0848 $54.2400
100+ $1.0162 $101.6200
155+ $0.9818 $152.1790
220+ $0.9132 $200.9040
285+ $0.8789 $250.4865
360+ $0.8445 $304.0200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 99,025 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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