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Same model may have multiple batches, images only for reference.
IRFB4410PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB4410PBF

Part No IRFB4410PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 96A TO-220AB
Datasheet
IRFB4410PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 5150pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090494-IRFB4410PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB4410PBF CAD Model

Description

The Infineon Technologies IRFB4410PBF is an N-channel MOSFET transistor that has a high popularity rate in the market.

  • ECCN: EAR99 certified
  • Alternative Parts: MTD20N06HDL1, BUK7230-55A, STD19NE06L, and MTD20N06HDLT4
  • Maximum Power Dissipation: 200W
  • Maximum Vds: 100V
  • Maximum Id: 88A
  • Maximum Rds On: 10 mOhm @ 58A, 10V

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Quantity Unit Price Ext. Price
23+ $2.1817 $50.1791
56+ $1.7901 $100.2456
87+ $1.7342 $150.8754
120+ $1.6783 $201.3960
155+ $1.6223 $251.4565
207+ $1.4545 $301.0815
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Availability: 10,040 pieces
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