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IRFB4610PBF Real Image IRFB4610PBF real image329 IRFB4610PBF real image330
Same model may have multiple batches, images only for reference.
IRFB4610PBF Real Image IRFB4610PBF real image329 IRFB4610PBF real image330
IRFB4610PBF Real Image IRFB4610PBF real image329 IRFB4610PBF real image330
Same model may have multiple batches, images only for reference.

IRFB4610PBF

Part No IRFB4610PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 73A TO-220AB
Datasheet
IRFB4610PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 3550pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069459-IRFB4610PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB4610PBF CAD Model

Description

The Infineon Technologies 069459-IRFB4610PBF is a N-channel MOSFET transistor used in discrete semiconductor products.

  • Package: TO-220AB
  • Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 190W
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 44A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6556 $57.9460
75+ $1.3585 $101.8875
115+ $1.3160 $151.3400
160+ $1.2736 $203.7760
205+ $1.2311 $252.3755
275+ $1.1038 $303.5450
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Availability: 15,225 pieces
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