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Same model may have multiple batches, images only for reference.
IRFB61N15DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFB61N15DPBF

Part No IRFB61N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 60A TO-220AB
Datasheet
IRFB61N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 3470pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.4W (Ta), 330W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 083668-IRFB61N15DPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB61N15DPBF CAD Model

Description

The Infineon Technologies IRFB61N15DPBF is a MOSFET with N-channel polarity.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 60A @ 25°C
  • Maximum Power Dissipation: 2.4W (Ta), 330W (Tc)
  • Package: TO-220AB
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V

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5+ $12.3158 $61.5790
10+ $10.1053 $101.0530
16+ $9.7895 $156.6320
22+ $9.4737 $208.4214
28+ $9.1579 $256.4212
37+ $8.2106 $303.7922
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