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Same model may have multiple batches, images only for reference.
IRFB812PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB812PBF

Part No IRFB812PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 500V 3.6A TO220AB / Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
IRFB812PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 810pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 78W (Tc)
Rds On (Maximum) @ Id, Vgs 2.2 Ohm @ 2.2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 777045-IRFB812PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFB812
Introduction Date June 24, 2011
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRFB812PBF CAD Model

Description

The Infineon Technologies IRFB812PBF is a HEXFET series MOSFET.

  • Channel Type: N
  • Package: TO-220-3
  • Mounting Style: Through hole
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Voltage: 500V
  • Continuous Drain Current: 3.6A (Tc) @ 25°C
  • Power Dissipation: 78W (Tc)
  • Maximum Vgs: ±20V
  • Maximum Rds On: 2.2 Ohm @ 2.2A @ 10V

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