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Same model may have multiple batches, images only for reference.
IRFH5053TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5053TRPBF

Part No IRFH5053TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.3A PQFN56
Datasheet
IRFH5053TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.3A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1510pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 8.3W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-PowerVDFN
Win Source Part Number 069474-IRFH5053TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH5053TRPBF CAD Model

Description

The Infineon Technologies 069474-IRFH5053TRPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 9.3A @ 25°C.

  • Maximum Power Dissipation: 3.1W (Ta), 8.3W (Tc)
  • Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V
  • Package: PQFN (5x6) Single Die
  • Application: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate Charge: 36nC @ 10V
  • Packaging: reel - TR
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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