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IRFH5304TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5304TR2PBF

Part No IRFH5304TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A 8VQFN
Datasheet
IRFH5304TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-VQFN
Win Source Part Number 1046881-IRFH5304TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5304TR2PBF CAD Model

Description

The Infineon Technologies IRFH5304TR2PBF is a MOSFET with SMD (SMT) mounting and a PQFN (5x6) Single Die package.

  • Mounting: SMD (SMT)
  • Package: PQFN (5x6) Single Die
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 22A (Ta), 79A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Maximum Gate Charge: 41nC @ 10V
  • Maximum Input Capacitance: 2360pF @ 10V
  • Maximum Rds On (Id,Vgs): 4.5 mOhm @ 47A, 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balance

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250+ $0.5174 $129.3500
390+ $0.5019 $195.7410
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925+ $0.4204 $388.8700
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