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IRFH5406TRPBF

Part No IRFH5406TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1256pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 14.4 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 1046882-IRFH5406TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFH5406
Introduction Date April 12, 2010
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFH5406TRPBF CAD Model

Description

The Infineon Technologies IRFH5406TRPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Mounting Type: Surface Mount
  • Case/Package: PQFN (5x6)
  • Drive Voltage: 10V
  • Power Dissipation: 3.6W (Ta), 46W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 11A (Ta), 40A (Tc)
  • Maximum Gate Charge: 35nC @ 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: High
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1880 $53.4600
90+ $1.1128 $100.1520
140+ $1.0752 $150.5280
200+ $1.0000 $200.0000
260+ $0.9625 $250.2500
325+ $0.9249 $300.5925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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