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Same model may have multiple batches, images only for reference.
IRFHM9331TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFHM9331TR2PBF

Part No IRFHM9331TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A 3X3 PQFN / Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R
Datasheet
IRFHM9331TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V
Vgs(th) (Maximum) @ Id 2.4V @ 25μA
Gate Charge (Qg) (Maximum) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1543pF @ 25V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 2.8W (Ta)
Rds On (Maximum) @ Id, Vgs 10 mOhm @ 11A, 20V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PQFN (3x3)
Package 8-PowerTDFN
Win Source Part Number 777054-IRFHM9331TR2PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFHM9331
Introduction Date June 30, 2010
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFHM9331TR2PBF CAD Model

Description

The Infineon Technologies IRFHM9331TR2PBF is a HEXFET series MOSFET.

  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C (Ta) or 24A @ (Tc)
  • Package: 8-PowerTDFN
  • Channel Type: P-channel
  • Drive Voltage: 10V/20V
  • Maximum Gate Voltage: ±25V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Manufactured in: Thailand
  • ECCN: EAR99
  • Estimated EOL Date: Obsolete/end of life

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