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IRFHM8326TRPBF

Part No IRFHM8326TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 50μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 2496pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Dimension 8-PowerTDFN
Win Source Part Number 108333-IRFHM8326TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFHM8326TRPBF CAD Model

Description

The IRFHM8326TRPBF is an N-channel MOSFET from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Package: 8-PowerTDFN
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 19A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 50μA
  • Maximum Gate Charge: 39nC @ 10V
  • Maximum Input Capacitance: 2496pF @ 10V
  • Maximum Rds On: 4.7 mOhm @ 20A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3661 $58.5760
385+ $0.3005 $115.6925
600+ $0.2911 $174.6600
825+ $0.2817 $232.4025
1,065+ $0.2723 $289.9995
1,420+ $0.2442 $346.7640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,500 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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