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Same model may have multiple batches, images only for reference.
IRFI1310NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI1310NPBF

Part No IRFI1310NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 24A TO220FP
Datasheet
IRFI1310NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 137535-IRFI1310NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI1310NPBF CAD Model

Description

The Infineon Technologies 137535-IRFI1310NPBF is an N-Channel MOSFET designed for use in various applications.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (Tc): 24A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 25V
  • Maximum Rds On at Id,Vgs: 36 mOhm @ 13A, 10V
  • Package: TO-220AB full-pak case
  • Suitable for: use in various electronic devices
  • Market Status: a medium-popularity part with limited supply and demand status in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4514 $50.7990
75+ $1.3578 $101.8350
115+ $1.3110 $150.7650
165+ $1.2174 $200.8710
215+ $1.1705 $251.6575
270+ $1.1237 $303.3990
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Availability: 1,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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