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Same model may have multiple batches, images only for reference.
IRFI4510GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI4510GPBF

Part No IRFI4510GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 35A TO220 / Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP Tube
Datasheet
IRFI4510GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2998pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 42W (Tc)
Rds On (Maximum) @ Id, Vgs 13.5 mOhm @ 21A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB Full-Pak
Package TO-220-3 Full Pack
Win Source Part Number 777056-IRFI4510GPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFI4510G
Introduction Date May 15, 2012
ECCN EAR99
Country of Origin China
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRFI4510GPBF CAD Model

Description

The Infineon Technologies IRFI4510GPBF is a MOSFET transistor that is a part of the HEXFET series.

  • Package: TO-220-3 Full Pack
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Continuous Drain Current: 35A (Tc)
  • Maximum Power Dissipation: 42W (Tc)
  • Gate Charge (Qg): 81nC @ 10V
  • Input Capacitance (Ciss): 2998pF @ 50V
  • Alternative Part: STP80NF10FP, SUA70090E-E3, TK55A10J1(Q,M), TK55A10J1(STA4,Q)
  • Introduction Date: May 15, 2012
  • Manufactured in: China
  • Estimated EOL Date: 2022
  • Popularity: Medium
  • Supply and Demand Status: Limited

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