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Same model may have multiple batches, images only for reference.
IRFI9Z24N Real Image
Same model may have multiple batches, images only for reference.

IRFI9Z24N

Part No IRFI9Z24N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 9.5A TO-220FP
Datasheet
IRFI9Z24N Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 29W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 5.4A, 10V
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 1046953-IRFI9Z24N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI9Z24N CAD Model

Description

The Infineon Technologies 438999 is a P-channel MOSFET mounted on a through hole and packaged in a TO-220AB Full-Pak.

  • Drain-Source Breakdown Voltage: 55V
  • Maximum Power Dissipation: 29W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 175 mOhm @ 5.4A, 10V
  • Continuous Drain Current: 9.5A (Tc) @ 25°C
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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