The Infineon Technologies MOSFET, part number IRFP4668PBF, is a N-Channel through-hole electronic component with a drain-source breakdown voltage of 200V and a continuous drain current of 130A (Tc) at 25°C.

• Drain-Source Breakdown Voltage: 200V
• Continuous Drain Current: 130A (Tc) @ 25°C
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On at Id,Vgs: 9.7 mOhm @ 81A, 10V
• Package: TO-247AC
• Status: Active with balanced supply and demand status
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range: -55°C to 175°C (TJ)
• Power Dissipation: 520W (Tc)