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Same model may have multiple batches, images only for reference.
IRFP4710 Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFP4710

Part No IRFP4710
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 72A TO-247AC
Datasheet
IRFP4710 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 205378-IRFP4710
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP4710 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance electronic component that is designed to provide reliable and efficient power management solutions.

  • Maximum Power Dissipation: 190W (Tc)
  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 72A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 170nC @ 10V
  • Package: TO-247AC
  • Dimension: TO-247-3
  • Popularity: popular choice

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.4545 $54.5450
23+ $4.4755 $102.9365
35+ $4.3357 $151.7495
48+ $4.1958 $201.3984
62+ $4.0560 $251.4720
83+ $3.6364 $301.8212
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 249 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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