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Same model may have multiple batches, images only for reference.
IRFR1010ZTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR1010ZTRLPBF

Part No IRFR1010ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRFR1010ZTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 109416-IRFR1010ZTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR1010ZTRLPBF CAD Model

Description

The Infineon Technologies IRFR1010ZTRLPBF is a MOSFET transistor that is designed to be used in a variety of electronic applications.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Continuous Drain Current at 25°C: 42A (Tc)
  • Maximum Rds On at Id, Vgs: 7.5 mOhm @ 42A, 10V
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Input Capacitance: 2840pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation (max): 140W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: D-Pak case
  • Mounting Technology: SMD (SMT)

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