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Same model may have multiple batches, images only for reference.
IRFR2307ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR2307ZPBF

Part No IRFR2307ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 42A DPAK
Datasheet
IRFR2307ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 2190pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205389-IRFR2307ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR2307ZPBF CAD Model

Description

The Infineon Technologies 205389-IRFR2307ZPBF MOSFET is a high-performance N-Channel MOSFET that is ideal for use in a wide range of applications.

  • Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 42A (Tc) @ 25°C
  • Maximum Rds On: 16 mOhm @ 32A, 10V
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 75nC @ 10V
  • Maximum Input Capacitance: 2190pF @ 25V
  • Package: D-Pak
  • Application: Discrete semiconductor products

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110+ $1.0565 $116.2150
170+ $1.0235 $173.9950
235+ $0.9905 $232.7675
305+ $0.9574 $292.0070
405+ $0.8584 $347.6520
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