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IRFR2405TRPBF Infineon Technologies IRFR2405TRPBF Real Image
Same model may have multiple batches, images only for reference.
IRFR2405TRPBF Infineon Technologies IRFR2405TRPBF Real Image
IRFR2405TRPBF Infineon Technologies IRFR2405TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR2405TRPBF

Part No IRFR2405TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 56A DPAK
Datasheet
IRFR2405TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 34A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017668-IRFR2405TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR2405TRPBF CAD Model

Description

The Infineon Technologies IRFR2405TRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 56A @ 25°C.

  • Maximum Power Dissipation: 110W (Tc)
  • Maximum Rds On: 16 mOhm @ 34A, 10V
  • Mounting Package: D-Pak
  • Mounting Type: SMD (SMT)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Application: Discrete semiconductor products

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Quantity Unit Price Ext. Price
90+ $0.5741 $51.6690
215+ $0.4711 $101.2865
330+ $0.4564 $150.6120
455+ $0.4417 $200.9735
590+ $0.4269 $251.8710
785+ $0.3828 $300.4980
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Availability: 30,000 pieces
MOQ: 90 pcs
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