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Same model may have multiple batches, images only for reference.
IRFR4510PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR4510PBF

Part No IRFR4510PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 100V 56A DPAK
Datasheet
IRFR4510PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 3031pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047075-IRFR4510PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR4510PBF CAD Model

Description

The Infineon Technologies IRFR4510PBF MOSFET is a surface-mount device with an N-channel polarity and a drain-source breakdown voltage of 100V.

  • Continuous Drain Current: 56A @ 25°C (Tc)
  • Maximum Power Dissipation: 143W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 81nC @ 10V
  • Packaging: D-Pak
  • Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1617 $52.2765
95+ $1.0882 $103.3790
145+ $1.0515 $152.4675
205+ $0.9779 $200.4695
270+ $0.9412 $254.1240
335+ $0.9044 $302.9740
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