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IRFR5305TRRPBF

Part No IRFR5305TRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 31A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 16A, 10V
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047079-IRFR5305TRRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR5305TRRPBF CAD Model

Description

The Infineon Technologies IRFR5305TRRPBF is a P-Channel MOSFET transistor with a power dissipation of 110W (Tc) and a drain-source breakdown voltage of 55V.

  • Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 31A (Tc)
  • Maximum Rds On @ Id,Vgs: 65 mOhm @ 16A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D-Pak
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2733 $50.5605
395+ $0.2560 $101.1200
610+ $0.2473 $150.8530
870+ $0.2300 $200.1000
1,130+ $0.2214 $250.1820
1,410+ $0.2128 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 76,010 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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