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Same model may have multiple batches, images only for reference.
IRFR5505PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR5505PBF

Part No IRFR5505PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A DPAK
Datasheet
IRFR5505PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047083-IRFR5505PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR5505PBF CAD Model

Description

The Infineon Technologies IRFR5505PBF is a P-Channel MOSFET electronic component that is used in various applications.

  • Supply and Demand: Balanced
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 57W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 18A (Tc)
  • Maximum Gate Charge @ Vgs: 32nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2595 $50.6025
415+ $0.2430 $100.8450
640+ $0.2348 $150.2720
920+ $0.2184 $200.9280
1,190+ $0.2102 $250.1380
1,490+ $0.2020 $300.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,330 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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