The Infineon Technologies IRFR825PBF is a N-Channel MOSFET type electronic component.

• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current at 25°C: 6A (Tc)
• Case/Package: D-Pak
• Power Dissipation (Max): 119W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Rds On at Id,Vgs: 1.3 Ohm @ 3.7A, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 34nC @ 10V
• Maximum Input Capacitance: 1346pF @ 25V
• Product Category: Discrete Semiconductor Products
• Lifecycle Status: Obsolete (EOL)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Supply and Demand Status: Sufficient