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Same model may have multiple batches, images only for reference.
IRFR8314TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR8314TRPBF

Part No IRFR8314TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 179A D2PAK / Trans MOSFET N-CH Si 30V 179A 3-Pin(2+Tab) DPAK T/R
Datasheet
IRFR8314TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 54nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 4945pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 2.2 mOhm @ 90A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D-PAK (TO-252AA)
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 777069-IRFR8314TRPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRFR8314PbF
Introduction Date July 01, 2014
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IRFR8314TRPBF CAD Model

Description

The Infineon Technologies IRFR8314TRPBF is a HEXFET N-channel MOSFET.

  • Continuous Drain Current: 90A @ 25°C
  • Maximum Power Dissipation: 125W @ Tc
  • Maximum Rds on: 2.2 mOhm @ 90A @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 54nC @ 4.5V
  • Maximum Input Capacitance: 4945pF @ 15V
  • Maximum Vgs(th): 2.2V @ 100μA
  • Package: TO-252-3, DPak
  • Mounting: Surface mount
  • Family: IRFR8314PbF
  • Supply and Demand Status: Limited
  • Popularity: Medium

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