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IRFS3107-7PPBF Real Image IRFS3107-7PPBF real image10315
Same model may have multiple batches, images only for reference.
IRFS3107-7PPBF Real Image IRFS3107-7PPBF real image10315
IRFS3107-7PPBF Real Image IRFS3107-7PPBF real image10315
Same model may have multiple batches, images only for reference.

IRFS3107-7PPBF

Part No IRFS3107-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 240A D2PAK-7
Datasheet
IRFS3107-7PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 9200pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 370W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 160A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 1047121-IRFS3107-7PPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFS3107-7PPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel device that features a drain-source breakdown voltage of 75V and a continuous drain current of 240A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 240A @ 25°C
  • Maximum Power Dissipation: 370W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 240nC @ 10V
  • Package: D2PAK (7-Lead)
  • Maximum Rds On: 2.6 mOhm @ 160A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)

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