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IRFS3307ZTRLPBF

Part No IRFS3307ZTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 126313-IRFS3307ZTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3307ZTRLPBF CAD Model

Description

The Infineon Technologies IRFS3307ZTRLPBF is an N-channel MOSFET with a drain-source breakdown voltage of 75V and a continuous drain current of 120A at 25°C.

  • Max Power Dissipation: 230W
  • Max Rds On: 5.8 mOhm at 75A and 10V
  • Gate-Source Threshold Voltage: 4V at 150μA
  • Max Gate Charge: 110nC at 10V
  • Max Input Capacitance: 4750pF at 50V
  • Max Gate-Source Voltage: ±20V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3254 $51.1588
53+ $1.9080 $101.1240
82+ $1.8484 $151.5688
112+ $1.7887 $200.3344
145+ $1.7291 $250.7195
194+ $1.5502 $300.7388
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,516 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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