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Same model may have multiple batches, images only for reference.
IRFS4115-7PPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS4115-7PPBF

Part No IRFS4115-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 105A D2PAK-7
Datasheet
IRFS4115-7PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 5320pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 11.8 mOhm @ 63A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 205395-IRFS4115-7PPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4115-7PPBF CAD Model

Description

The Infineon Technologies IRFS4115-7PPBF is a high-performance N-channel MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 105A at 25°C
  • Rds On: 11.8 mOhm at 63A and 10V
  • Max Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 5V at 250μA
  • Package: D2PAK (7-Lead)
  • Compliance: RoHS standards
  • Supply and demand status: balance

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50+ $2.0298 $101.4900
77+ $1.9664 $151.4128
106+ $1.9030 $201.7180
136+ $1.8395 $250.1720
182+ $1.6492 $300.1544
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