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IRFS4615TRLPBF

Part No IRFS4615TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 33A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047146-IRFS4615TRLPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFS4615TRLPBF CAD Model

Description

The Infineon Technologies IRFS4615TRLPBF is an N-channel MOSFET with a drain-source breakdown voltage of 150V and continuous drain current of 33A @ 25°C.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 33A @ 25°C
  • Package: D2PAK case, which has a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB dimension
  • Maximum Rds On at Id,Vgs: 42 mOhm @ 21A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 144W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Input Capacitance: 1750pF @ 50V
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 5V @ 100μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3413 $53.6520
95+ $1.1006 $104.5570
145+ $1.0662 $154.5990
195+ $1.0318 $201.2010
255+ $0.9974 $254.3370
340+ $0.8942 $304.0280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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