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IRFS4710

Part No IRFS4710
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069592-IRFS4710
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFS4710 CAD Model

Description

The Infineon Technologies IRFS4710 is a N-Channel MOSFET that offers a drain-source breakdown voltage of 100V and a continuous drain current of 75A @ 25°C.

  • Maximum Rds On: 14 mOhm @ 45A and 10V
  • Package: D2PAK package
  • Application: designed for use in a wide range of applications including power supplies, DC-DC converters, and motor control circuits.
  • Maximum Power Dissipation: 3.8W (Ta) and 200W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: obsolete(EOL) and has a medium popularity.
  • Supply and demand status: balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.4782 $50.8692
15+ $6.9565 $104.3475
23+ $6.7391 $154.9993
31+ $6.5217 $202.1727
40+ $6.3044 $252.1760
54+ $5.6522 $305.2188
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 270 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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