The Infineon Technologies IRFS59N10DTRLP is a N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 59A @ 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 59A @ 25°C
• Maximum Power Dissipation: 3.8W (Ta), 200W (Tc)
• Gate-Source Threshold Voltage: 5.5V @ 250μA
• Case: D2PAK
• Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Status: Active
• Operating Temperature: -55°C to 175°C (TJ)
• Maximum Rds On @ Id,Vgs: 25 mOhm @ 35.4A, 10V
• Maximum Gate-Source Voltage: ±30V
• Supply and Demand Status: Balanced