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Same model may have multiple batches, images only for reference.
IRFSL3206PBF Real Image
Same model may have multiple batches, images only for reference.

IRFSL3206PBF

Part No IRFSL3206PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO-262
Datasheet
IRFSL3206PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6540pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047181-IRFSL3206PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL3206PBF CAD Model

Description

The Infineon Technologies 458236 is an N-Channel MOSFET Integrated Circuit that can dissipate a maximum power of 300W (Tc).

  • Package: TO-262
  • Mounting Technology: Through Hole
  • Drain-Source Breakdown Voltage: 60V
  • Drive Voltage: 10V
  • Category: Discrete Semiconductor Products
  • Status: active
  • Supply and Demand Status: balanced
  • Application: power management

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75+ $1.5847 $118.8525
115+ $1.5352 $176.5480
160+ $1.4857 $237.7120
205+ $1.4361 $294.4005
270+ $1.2876 $347.6520
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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