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IRFSL3306PBF

Part No IRFSL3306PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4520pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040756-IRFSL3306PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL3306PBF CAD Model

Description

The Infineon Technologies IRFSL3306PBF MOSFET is a high-performance electronic component that is designed to deliver exceptional power efficiency.

  • Mounting: Through-hole
  • Package: TO-262
  • Maximum Power Dissipation: 230W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 4520pF @ 50V
  • Maximum Rds On @ Id,Vgs: 4.2 mOhm @ 75A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5321 $53.6235
80+ $1.2572 $100.5760
125+ $1.2179 $152.2375
170+ $1.1786 $200.3620
220+ $1.1393 $250.6460
295+ $1.0214 $301.3130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,610 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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