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Same model may have multiple batches, images only for reference.
IRFSL4127PBF Real Image
Same model may have multiple batches, images only for reference.

IRFSL4127PBF

Part No IRFSL4127PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 72A TO262
Datasheet
IRFSL4127PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 46 Weeks
Features N-Channel 200 V 72A (Tc) 375W (Tc) Through Hole TO-262
Manufacturer Infineon Technologies
Series HEXFET®
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Case / Package TO-262
Family Name IRFSL4127
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 921497-IRFSL4127PBF
Ultra Librarian 3D Model Ultra Librarian IRFSL4127PBF CAD Model

Description

The Infineon Technologies IRFSL4127PBF is an N-channel MOSFET with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 72A.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 72A
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Power Dissipation: 375W
  • Supply and Demand Status: Balanced
  • Quantity per Package: 1000
  • Operating Temperature: -55°C and 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
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Availability: 1,400 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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