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Same model may have multiple batches, images only for reference.
IRFU3518-701PBF Real Image
Same model may have multiple batches, images only for reference.

IRFU3518-701PBF

Part No IRFU3518-701PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 38A IPAK
Datasheet
IRFU3518-701PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 29 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047209-IRFU3518-701PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU3518-701PBF CAD Model

Description

The Infineon Technologies IRFU3518-701PBF MOSFET is a N-channel polarity, through-hole device with a drain-source breakdown voltage of 80V and a continuous drain current of 38A at 25°C.

  • Channel Polarity: N-channel
  • Mounting Type: Through-Hole
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 38A @ 25°C
  • Power Dissipation: 110W (Tc)
  • Maximum Rds On: 29 mOhm @ 18A, 10V
  • Package: IPAK (TO-251)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1710pF @ 25V

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75+ $1.6299 $122.2425
110+ $1.5789 $173.6790
155+ $1.5280 $236.8400
200+ $1.4770 $295.4000
265+ $1.3242 $350.9130
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